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PUBLICATIONS IN REFEREED JOURNAL

 Total citations: 1366     h-index: 21     Impact Factor: 369.126

  1. Hamid Ullah, Waqas Iqbal, Asad Ali, N.A.Noor, Young-Han Shin, M. Junaid Iqbal Khan, H.I. El Saeedy. Effects of gallium and arsenic substitution on the electronic and magnetic properties of monolayer SnS. Physica Scripta, 2021, (I.F = 1.985)
  2. A.Noor, M. Waqas Iqbal, Taharh Zelai, Asif Mahmood, H.M.Shaikh, Shahid M. Ramay, Waheed Al-Masry. Analysis of direct band gap A2ScInI6(A=Rb, Cs) double perovskite halides using DFT approach for renewable energy devices. Journal of material Research and Technology, 2021, (I.F = 5.289)
  3. SikandarAftab, Samiya, Mian Sabir Hussain, Ehsan Elahi, SaqlainYousuf, Hafiz Muhammad SalmanAjmal, Muhammad Waqas Iqbal, Muhammad Zahir Iqbal. ReSe2/metal interface for hydrogen gas sensing. Journal of colloid and interface science, 2021, (I.F = 7.489)
  4. SR Ali, MM Faisal, KC sanal, MW Iqbal. Impact of Carbon-based charge transporting layer on the performance of parovskite solar cells. Solar Energy, 2021, (F = 4.674) S Aftab, M Samiya, HMU Haq, MW iqbal, et al. Single nanoflake-based PtSe2 p-n junction (in-plane) formed by optical excitation of point defects in BN for ultrafast switching photodiodes. Journal of materials Chemistry C, 2021, (I.F = 7.059)
  1. MM Faisal, SR Ali, KC Sanal, MW Iqbal, et al. Highly porous terpolymer-MOF composite electrode material for high performance supercapattery devices. Journal of Electroanalytical Chemistry, 2021, (F = 3.218)
  2. Amir M Afzal, Sohail Mumtaz, Muhammad Zahir Iqbal, Muhammad Waqas Iqbal, Alina Manzoor, G Dastgeer, M. Javaid Iqbal, et al. Fast and high photoresponsivity Gallium Telluride/ Hafnium Selenide van der walls hetrostructure photodiode. Journal of material Chemistry C, 2021, (F = 7.059)
  3. Muhammad Tufail, Altaf Ur Rehman, Banat Gul, Waseem Akram, Haseeb Ullah, Muhammad Waqas Iqbal. Effect of Pb doping on electronic and thermoelectric properties of thallium antimony telluride (Tl33Sb1.67−xPbxTe6) nano-compound: A combined experimental and theoretical investigations. Physica B: Condensed Matter, 2021, (I.F = 1.902)
  4. Sikandar Aftab, Samiya MS, Wugang Liao, Waqas Iqbal. Switching photodiodes based on (2D/3D) PdSe2/Si heterojunctions with a broad band spectral response. Journal of material Chemistry C, 2021, (I.F=7.059)
  5. Sikandar Aftab, Samiya MS, Ali Raza, Waqas Iqbal, Hafiz Mansoor ul Haq, Karna Ramachandraiah, Saqlain Yousaf, Seong Chan Jun, Atteq ur rehman, Muhammad Zahir Iqbal. Reversible and stable doping technique to invert the carrier polarity of MoTe2. Nanotechnology, 2021, (I.F=3.551)
  6. Ali Shehzad, Qasim Mahmood, Ghulam Murtaza, Nessrin Kattan, Waqas Iqbal, Asif Mahmood Abdullah Ali H. Ahmadini. Study of Optoelectronic and Thermoelectric Characteristics of Cesium Based Halides CsYbX3 (X = Br, Cl) for Clean Energy Harvesting. ECS Journal of Solids (2021): 10(1), 015002. (IF=2.142)
  7. Ghulam Muhammad Mustafa, N.A. Noor, Waqas Iqbal, M. Sajjad, M.A. Naeem, Hamid Shaikh, Asif Mahmood, Waheed Al-Masry. Study of optoelectronic and transport properties of MgLu2Z4 (Z=S, Se) spinels for optoelectronic and energy harvesting applications. Material Science ion Semiconductor processing (2021): 121, 105452. (IF=2.82)
  8. Mahmood, Asif, M. Rashid, Kanza Safder, Waqas Iqbal, N. A. Noor, Shahid M. Ramay, Waheed Al-Masry, and Najib YA Al-Garadi. Spin-dependent Rare-earth-based MgPr2X4 (X= S, Se) Spinels Investigations for Spintronic and Sustainable Energy Systems Applications. Results in Physics (2020): 103709. (I.F=4.019)
  9. Sikandar Aftab, Hafiz Mansoor Ul Haq, Saqlain Yousuf, Muhammad Usman Khan, Zaheer Ahmed, Jamal Aziz, Muhammad Waqas Iqbal, Atteq ur Rehman, and Muhammad Zahir Iqbal. Van der Waals MultiHeterostructures (PN, PIN, and NPN) for Dynamic Rectification in 2D Materials. Advanced Materials Interfaces, (2020), (I.F=4.948)
  10. Zeesham Abbas, Sikander Azam, Azmat Iqbal Bashir, Asia Marriam, Muhammad Waqas, Thamraa Alshahrani, and Bakhtiar Ul Haq. A systematic study on optoelectronic properties of Mn4+-activated Zr-based hexafluoride red phosphors X2ZrF6 (X= K, Na, Cs): First-principles investigation and prospects for warm-white LEDs applications. Physica Scripta (2020), (I.F=1.985)
  11. Waqas Iqbal, Hira Ateeq, Mumtaz Manzoor, Sikander Azam, and Sikandar Aftab. First principal approach to substitutional effect of europium (Eu+2) on electronic and optical parameters of strontium pyroniobate for low temperature applications. Journal of Alloys and Compounds, 157115. (2020), (I.F=4.650)
  12. Muhammad Waqas Iqbal, Ehsan Elahi, Aliya Amin, Sikandar Aftab, Imran Aslam, Ghulam Hussain, and Muhammad Arslan Shehzad. A Facile Route to Enhance the Mobility of MoTe2 Field Effect Transistor via Chemical Doping. Superlattices and Microstructures, 106698. (2020), (I.F=2.120)
  13. Ghulam Mustafa, N. A. Noor, M. Waqas Iqbal, M. Sajjad, M. A. Naeem, Q. Mehmood, H. M. Shaikh, Asif Mehmood, Waheed Al.Masry, Study of optoelectronic and transport properties of MgLu2Z4 (Z=S, Se) spinels for optoelectronic and energy harvesting applications, Materials Science in Semiconductor Processing, 105452. 2020, (I.F=2.82)
  14. Yaqoob, G. Murtaza, M. Waqas Iqbal, N. A. Noor, Asif Mahmood, Shahid M. Ramay, Waheed Al-Masry, and Najib YA Al-Garadi. Study of half metallic nature and transport properties of XMnSe2 (X= Ca, Sr and Ba) compounds via ab-initio calculations. Journal of Materials Research and Technology 9, no. 5, 10511-10519, (2020). (I.F=3.770)
  15. Waqas Iqbal, Mumtaz Manzoor, Hira Ateeq, Sikander Azam, Ghulam Murtaza, Sikandar Aftab, M. A. Kamran, and Abdul Majid. Structural, electronic, optoelectronic and transport properties of LuZnCuAs2 compound: First principle calculations under DFT. Physica B: Condensed Matter (2020), (I.F=1.880)
  16. Ehsan Elahi, Muhammad Farooq Khan, Shania Rehman, HM Waseem Khalil, Malik Abdul Rehman, Deok-kee Kim, Honggyun Kim, Khan, K. Shahzad, Waqas Iqbal, and M.A Basit. Enhanced electrical and broad spectral (UV-Vis-NIR) photodetection in a Gr/ReSe2/Gr heterojunction. Dalton Transactions (2020), (I.F=4.052)
  17. Azam, Sikander, Muhammad Irfan, Muhammad Waqas Iqbal, Muhammad Arshad Kamran, R. Khenata, T. Seddik, Banat Gul et al. Bulletin of Materials Science 43, no. 1 (2020): 1-10, (I.F=0.870)

22.  Aftab, Sikandar, M. S. Samiya, Rabia Ms, Saqlain Yousaf, Rafia Khawar, Ayesha Younus, Mumtaz Manzoor, Muhammad Waqas Iqbal, and Muhammad Zahir Iqbal. Carrier Polarity Modulation of Molybdenum Ditelluride (MoTe2) for Phototransistors and Switching Photodiodes. Nanoscale (2020), (I.F=7.394)

  1. W. Iqbal, F. Firdous, M. Manzor, H. Atiq, Study of electrical attributes of molybdenum ditelluride (MoTe2) FET using experimental and theoretical evidences, Microelectronic engineering, 230:111356, (2020). (I.F= 2.305)
  2. Imran Aslam, M. Saqib, W. Iqbal, Rajender Boddula, Tariq Mehmood, Usman Ghani, Synthesis of Non-Toxic Fe2(WO4)3 Photocatalyst with Efficient Performance, Current Analytical Chemistry, 16, (2020). (I.F= 1.365)
  3. W. Iqbal, Faiza Firdous, Mumtaz Manzoor, Hira Ateeq, Sikander Azam, Sikandar Aftab, M. A. Kamran, Altaf ul Rehman, and Abdul Majid. Study of electrical attributes of molybdenum ditelluride (MoTe2) FET using experimental and theoretical evidences. Microelectronic Engineering (2020): 111365. (I.F=2.305)
  4. Azam, Sikander, Muhammad Arshad Kamran, Muhammad Waqas Iqbal, Muhammad Irfan, Saman Abdullah, Amjid Mahmood, Muhammad Salman Khan et al. Revealing the optoelectronic properties of Re-based double perovskites using the Tran-Blaha modified Becke-Johnson with density functional theory. Journal of Molecular Modeling 26, no. 6 (2020): 158-158. (I.F=1.58)
  5. Muhammad Waqas Iqbal, Kinza Shahzad, Hira Ateeq, Imran Aslam, Sikandar Aftab, Sikander Azam, M. A. Kamran, and Muhammad Farooq Khan. An effectual enhancement to the electrical conductivity of graphene FET by silver nanoparticles. Diamond and Related Materials (2020): 107833. (I.F=2.290)
  6. Aftab, Sikandar, M. S. Samiya, Muhammad Waqas Iqbal, Pragati Shinde, Muhammad Farooq Khan, Atteq ur Rehman, Saqlain Yousaf, Sewon Park, and Seong Chan Jun. Two-Dimensional Electronic Devices Modulated by the Activation of Donor-Like States in Boron Nitride. Nanoscale (2020), (I.F=7.394)
  7. Azam, Sikander, Muhammad Arshad Kamran, Muhammad Waqas Iqbal, Muhammad Irfan, Tayyaba Qaiser, Salman Khan, Thamer Alharbi et al. Ab-initio study of Cu-based oxychalcogenides: A new class of materials for optoelectronic applications. Journal of Solid State Chemistry (2020): 121191. (I.F=2.179)
  8. Muhammad Zahir Iqbal, Abbas Khan, Sana Khan, Nadia Anwar, Syed Shabhi Haider, Mian Muhammad Faisal, Muhammad Waqas Iqbal, Adnan Ali, Javed Iqbal, and Muhammad Javaid Iqbal. Formation of pn-Junction with Chemical Modification of Graphene-Hexagonal Boron Nitride Heterostructure. Journal of Nanoelectronics and Optoelectronics 14, no. 10 (2019): 1427-1433, (I.F=1.069)

31.  M. W. Iqbal, E. Elahi, Aliya Amin, G. Hussain, and Sikandar Aftab. Chemical doping of transition metal dichalcogenides (TMDCs) based field effect transistors: A review. Superlattices and Microstructures (2019) (I.F=2.385)

32.  Mahmood, Amjid, Sikander Azam, Muhammad Irfan, Muhammad Arshad Kamran, Thamer Alharbi, Abdul Majid, Muhammad Waqas Iqbal et al. Cation effect on electronic, optical and thermoelectric properties of perovskite oxynitrides: Density functional theory. Materials Science in Semiconductor Processing (2019) (I.F=2.722)

  1. Zahir Iqbal, Abbas Khan, Shabhi Haider, M. W. Iqbal, M. Javaid Iqbal, Magnetic Field Driven Mobility Tweaking in Graphene, Journal of Nanoelectronics and optoelectronics, 14(10):1420-1426, (2019). (I.F= 1.085)

34.  Muhammad Waqas Iqbal, Kinza Shahzad, Ghulam Hussain, Muhammad Kamran Arshad, Rehan Akbar, Sikander Azam, Sikandar Aftab, Thamer Alharbi, and Abdul Majid. Gate dependent phonon shift in tungsten disulfide (WS2) field effect transistor. Materials Research Express 6, (2019) (I.F=1.449)

35.  Muhammad Waqas Iqbal, Kinza Shahzad, Rehan Akbar, and Ghulam Hussain. A review on Raman finger prints of doping and strain effect in TMDCs. Microelectronic Engineering (2019) (I.F=2.305)

  1. Imran Aslam, M. Hassan Farooq, Muhammad Ashfaq, Muhammad Abid, Muhammad Waqas Iqbal, Rajender Boddula, Usman Ghani, Synthesis of WO3.H2O spherical particles for efficient photocatalytic properties under visible light source, Materials Science for Energy Technologies, 2019 (I.F=5.04)
  2. Ameer Maavia, Imran Aslam, M. Tanveer, M. Rizwan, W.Iqbal, M.Tahir, Habib Hussain, Rajender Boddula, M.Yousuf Facile Synthesis of g-C3N4/CdWO4 with Excellent Photocatalytic Performance for the Degradation of Minocycline, Materials Science for Energy Technologies, 2019 (I.F=5.04)
  3. Muhammad Zahir Iqbal, Abbas Khan, Sana Khan, Nadia Anwar, Syed Shabhi Haider, Mian Muhammad Faisal, Muhammad Waqas Iqbal, Adnan Ali, Javed Iqbal, and Muhammad Javaid Iqbal. Formation of pn-Junction with Chemical Modification of Graphene-Hexagonal Boron Nitride Heterostructure. Journal of Nanoelectronics and Optoelectronics, 2019 (F = 1.609)
  4. Irfan, Muhammad, Muhammad Arshad Kamran, Sikander Azam, Muhammad Waqas Iqbal, Thamer Alharbi, Abdul Majid, S. Bin Omran, R. Khenata, A. Bouhemadou, and Xiaotian Wang. Electronic structure and optical properties of TaNO: An ab initio study. Journal of Molecular Graphics and Modelling (2019) (I.F=1.863)
  5. W. Iqbal, Aliya Amin, M. A. Kamran, Hira Ateeq, Ehsan Elahi, G. Hussain, Sikander Azam, Sikandar Aftab, Thamer Alharbi, and Abdul Majid. Tailoring the electrical properties of MoTe2 field effect transistor via chemical doping. Superlattices and Microstructures (2019) (I.F=2.385)
  6. W. Iqbal, G. Hussain, M.A. Kamran, I. Aslam, T. Alharbi, S. Azam, A. Majid, S. Razzaq, Effect of E-beam irradiation on graphene sandwiched between h-BN layers, Microelectronic Engineering, 2019 (I.F=2.305)
  7. Sikandar Aftab, Muhammad Waqas Iqbal, Amir Muhammad Afzal, Farooq Khan, Ghulam Hussain, Hafiza Sumaira Waheed, Muhammad Arshad Kamran, Formation of MoTe2 Based Schottky Junction Employing Ultra-low and High Resistive Metal Contacts, RSC Advances, 2019 (I.F=3.84)
  8. Muhammad Arshad Kamrana, Bingsuo Zoub, Ruibin Liu, M.A. Saeed, Abdul Majid, Thamer Alharbi, Muhammad Waqas Iqbal, Tanveer-Ul-Hassan Shah, Single-channel dual tunable emission in the visible and near-infrared region using aggregations of Mn(II) ions in an individual Mn-doped CdS nanosheet, Journal of Physics and Chemistry of Solids, 2019 (I.F=2.2)
  9. Z. Iqbal, A Khan, S. S. Haider, M. W. Iqbal, A. Ali, M. J. Iqbal, Magnetic field driven mobility tweaking in grapheneJournal of Nanoelectronics & Optoelectronics, 2019(I.F = 1.609)
  10. Salma Siddique, Muhammad Zahir Iqbal, Muhammad Waqas Iqbal, and Sana Khan. Ultraviolet-light-driven enhanced photoresponse of chemical-vapor-deposition grown graphene-WS2 heterojunction based FETs. Sensors and Actuators B: Chemical 257 (2018): 263-269, (I.F=6.390)
  11. Muhammad Arshad Kamran, Abdul Majid, Thamer Alharbi, Muhammad Waqas Iqbal, Khayam Ismail, Ghulam Nabi, Zi-An Li, Bingsuo Zou, Novel Cd-CdS micro/nano heterostructures: Synthesis and luminescence properties, Optical Materials, 527-534, 2017 (I.F=2.238)
  12. Muhammad Arshad Kamran, Abdul Majid, Thamer Alharbi, Muhammad Waqas Iqbal, Muhammad Waleed Amjad, Ghulam Nabi, Shuangyang Zou, Bingsuo Zou, Large Tunable Luminescence by Mn(II) aggregates in Mn-doped ZnS nanobelts, Journal of Materials Chemistry C, 2017 (I.F=7.059)
  13. Z. IqbalG. Hussain, S. Siddique, M. W. Iqbal, Interlayer reliant magnetoresitance in graphene spin valveJournal of Magnetism and Magnetic Materials, 330–333, 422, (2017). (Impact factor =2.68)
  14. Muhammad Zahir Iqbal, Nadia Anwar, Salma Siddique, Muhammad Waqas Iqbal, Tassadaq Hussain. Formation of pn-junction with stable n-doping in graphene field effect transistors using e-beam irradiation, Optical Materials, 2017 (I.F=2.238)
  15. Muhammad Farooq Khan, Muhammad Arslan Shehzad, Muhammad Zahir Iqbal, Muhammad Waqas Iqbal,  Ghazanfar Nazir, Yongho Seo, Jonghwa Eom. Facile route to a high-quality graphene/MoS2 vertical field effect transistor with gate-modulated photocurrent response Journal of Materials Chemistry C, 2017 (I.F=7.059)
  16. Muhammad Zahir Iqbal, Ghulam Hussain, Salma Siddique, Muhammad Waqas Iqbal, Enhanced magnetoresistance in graphene spin valve, Journal of Magnetism and Magnetic Materials, 2017 (I.F=68)
  17. Muhammad Zahir Iqbal, Ghulam Hussain, Salma Siddique, Muhammad Waqas Iqbal, Graphene Spin Valve: An Angle Sensor, Journal of Magnetism and Magnetic Materials, 2017 (I.F=68)
  18. Farooq Khan, M. Arslan Shehzad, M. Zahir Iqbal, M. Waqas Iqbal, Ghazanfar Nazir, Yongho Seo, and Jonghwa Eom. A facile route to a high-quality graphene/MoS 2 vertical field-effect transistor with gate-modulated photocurrent response. Journal of Materials Chemistry C 5, no. 9 (2017): 2337-2343. (I.F=7.059)
  19. Muhammad Zahir Iqbal, Ghulam Hussain, Salma Siddique, and Muhammad Waqas Iqbal. Interlayer reliant magnetotransport in graphene spin valve. Journal of Magnetism and Magnetic Materials 441 (2017): 39-42. (I.F=2.683)
  20. Salma Siddique, Muhammad Zahir Iqbal, Muhammad Waqas Iqbal, Sana Khan Ultraviolet-light-driven enhanced photoresponse of chemical-vapor-deposition grown Graphene-WS2 heterojunction based FETs, Sensors and Actuators B chemical, 2017 (I.F=390)
  21. Muhammad Zahir, Muhammad Waqas Iqbal, Salma Siddique, Muhammad Farooq Khan, Shahid Mahmood Ramay, Jungtae Nam, Keun Soo Kim, and Jonghwa Eom. Interaction driven quantum Hall effect in artificially stacked graphene bilayers. Scientific reports 6, no. 1 (2016): 1-6. (I.F=578)
  22. Muhammad Zahir Iqbal, Salma Siddique, Ghulam Hussain, Muhammad Waqas Iqbal, Room temperature spin valve effect in NiFe/Gr-hBN/Co magnetic tunnel junction, Journal of Materials Chemistry C, 2016 (I.F=7.059)
  23. Z. Iqbal, M. W. Iqbal, M. F. Khan, J. T. Nam, K. S. Kim, Jonghwa Eom, Interaction driven quantum Hall effect in artificially stacked graphene bilayers, Nature Scientific Reports, 24815, 2016 (I.F=5.578)
  24. Muhammad Zahir Iqbal, Ghulam Hussain, Salma Siddique, Muhammad Waqas Iqbal, Ghulam Murtaza, Shahid Mahmood Ramay, Interlayer quality dependent graphene spin valve, Journal of Magnetism and Magnetic Materials, 2016 (I.F=68)
  25. Muhammad Arshad Kamran, Ghulam Nabib, Abdul Majida, Muhammad Waqas Iqbal,  Thamer Alharbi,  Yongyou Zhangd, Bingsuo Zoud, Tunable emission and conductivity enhancement by tellurium doping in CdS nanowires for optoelectronic applications Physica E: Low-dimensional Systems and Nanostructures, 81-87, 2016 (I.F=1.8)
  26. Muhammad Waqas Iqbal, Muhammad Zahir Iqbal, Muhammad Farooq Khan, Muhammad Arshad Kamran, Abdul Majid, Thamer Alherbi, Jonghwa Eom, Tailoring the Electrical and Photo-electrical Properties of WS2 Field Effect Transistor by Selective n-type Chemical Doping. RSC Advances, 24675-24682, 2016 Accepted (I.F=3.84)
  27. Muhammad Zahir Iqbal, Muhammad Waqas Iqbal, Salma Siddique, Muhammad Farooq Khan, Shahid Mahmood Ramay. Room temperature spin valve effect in NiFe/WS2/Co junctions. Nature Scientific Reports. 21038, 2016(I.F=5.578)
  28. Farooq Khan, M. Zahir Iqbal, M. Waqas Iqbal, Volodymyr M. Iermolenko, HM Waseem Khalil, Jungtae Nam, Keun Soo Kim, Hwayong Noh, and Jonghwa Eom. Stable and reversible doping of graphene by using KNO3 solution and photo-desorption current response. RSC Advances 5, no. 62 (2015): 50040-50046. (I.F=3.84)
  29. Farooq Khan, M. Zahir Iqbal, M. Waqas Iqbal, Vladimir M. lermolenko, H. M. Waseem Khalil, Jungtae Nam, Keun Soo Kim, Hwayong Noh and Jonghwa Eom. Stable and reversible doping of graphene by KNO3 and photo-desorption current response. RSC Advances. 2015 (I.F=3.84)
  30. Z. Iqbal, M. W. Iqbal, M. F. Khan, and Jonghwa Eom. Ultraviolet-light-driven doping modulation in chemical vapor deposition grown graphene. Physical Chemistry Chemical Physics 17, no. 32 (2015): 20551-20556. (I.F=3.567)
  31. Muhammad Arslan Shehzad, Dung Hoang Tien, M Waqas Iqbal, Jonghwa Eom, JH Park, Chanyong Hwang, Yongho Seo Nematic Liquid Crystal on a Two Dimensional Hexagonal Lattice and its Application. Nature Scientific Reports,13331, 2015. (I.F=5.578)
  32. W. Iqbal, M Zahir Iqbal, M Farooq Khan, M Arslan Shehzad, Yongho Seo, Jong Hyun Park, Chanyong Hwang, Jonghwa Eom. High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films. Nature Scientific Reports, 5,10699, 2015. (I.F=5.578)
  33. M Z Iqbal, MW Iqbal, MF Khan, J Eom Ultraviolet-light-driven doping modulation in chemical vapor  deposition grown graphenePhysical Chemistry Chemical Physics, 17, 20551-20556, 2015 (I.F=4.493)
  34. Z. Iqbal, M. W. Iqbal, Xiaozhan Jin, Chanyong Hwang, Jonghwa Eom Interlayer dependent polarity of magnetoresistance in graphene spin valvesJournal of Materials Chemistry C,3,298 (2015). (I.F=7.059)
  35. W. Iqbal, M. Z. Iqbal, M. F. Khan, M. A. Shehzad, Y Seo, Jonghwa Eom Deep-ultraviolet-light-driven reversible doping of WS2 field-effect transistors. Nanoscale, 7, 747, 2015. (I.F=7.394)
  36. W. Iqbal, M. Z. Iqbal, Xiaozhan Jin, Chanyong Hwang, Jonghwa Eom, Superior characteristics of graphene field effect transistor enclosed by chemical-vapor-deposition-grown hexagonal boron nitride, Journal of Materials Chemistry C, 2014. DOI: 10.1039/c4tc01176g. (I.F=7.059)
  37. F. Khan, M. Z. Iqbal, M. W. Iqbal, Jonghwa Eom, Improving electrical properties of graphene by chemical doping, Science and Technology of Advanced Materials, 2014. (I.F=3.433)
  38. Z. Iqbal, M. F. Khan, M. W. Iqbal, Jonghwa Eom, Tuning the electrical properties of exfoliated graphene layers by deep ultraviolet irradiation, Journal of Materials Chemistry C, 5404-5410, 2, 2014. (I.F=7.059)
  39. Choi, H. Kim, J. Park, M. W. Iqbal, M. Z. Iqbal, Jonghwa Eom, Jongwan Jung, Enhanced performance of graphene by using gold film for transfer and masking process, Current Applied Physics, 1045-1050, 4(8), 2014. (I.F=2.026)
  40. W. Iqbal, M. Z. Iqbal, Xiaozhan Jin, Chanyong Hwang,Jonghwa Eom, Edge oxidation effect of chemical vapor deposition grown graphene nanoconstriction, ACS Applied Materials & Interfaces, 4207-4213, 6(6), 2014. (I.F=8.456)
  41. F. Khan, M. W. Iqbal, M. Z. Iqbal, M. A. Shehzad, Y. Seo, and Jonghwa Eom. Photocurrent response of MoS2 field-effect transistor by deep ultraviolet light in atmospheric and N2 gas environments. ACS applied materials & interfaces 6, no. 23 (2014): 21645-21651. (I.F=8.456)
  42. W. Iqbal, M. Z. Iqbal, M. F. Khan, Jonghwa Eom, Modification of structural and electrical properties of graphene layers by Pt adsorbates, Science and Technology of Advanced Materials, 2014. (I.F=3.433)
  43. Hussain, M. W. Iqbal, J Park, M. Ahmad, J Singh, Jonghwa Eom, Jongwan Jung

Physical and electrical properties of graphene grown under different hydrogen flow in     low pressure chemical vapor deposition Nanoscale research letters, 546,9 2014. (I.F=7.394)

  1. Z. Iqbal, Özgür Kelekçi, M. W. Iqbal, Xiaozhan Jin, Chanyong Hwang, Jonghwa Eom, Enhanced intervalley scattering in artificially stacked double-layer graphene, New Journal of Physics, 083020, 16, 2014. (I.F=3.673)
  2. Z. Iqbal, M. W. Iqbal, Jae Hong Lee, Yong Seung Kim, Seunghyun Chun, Jonghwa Eom, Spin valve effect of NiFe/graphene/NiFe junctions, Nano Research, 373-380, 6(5), 2013. (I.F=7.392)
  3. Z. Iqbal, O. Kelekci, M.W. Iqbal, Jonghwa Eom, The structural and electrical evolution of chemical vapor deposition grown graphene by electron beam irradiation induced disorder, Carbon, 361-377, 59, 2013. (I.F=8.821)
  4. Z. Iqbal, S. Siddique, M. W. Iqbal, Jonghwa Eom, Formation of p–n junction with stable p-doping in graphene field effect transistors using deep UV irradiation, Journal of Materials Chemistry C, 3078-3083, 1, 2013. (I.F=7.059)
  5. K. Singh, AK Singh, M. W. Iqbal, J Eom, JR Yeon, K Shin, Direct Synthesis of Multilayer Sheets of Reduced Graphene Oxide Over Cu-Foil Graphene, 1, 67, 2013. (I.F=2.23)
  6. Singh, M. W. Iqbal, V. K. Singh, M. Z. Iqbal, Jae Hong Lee, Seung-Hyun Chun, Koo Shin, Jonghwa Eom, Molecular n-doping of chemical vapor deposition grown graphene, Journal of Materials Chemistry, 15168, 22, 2012. (I.F=7.059)
  7. R. Turpu, M. W. Iqbal, M. Z. Iqbal, Jonghwa Eom, Relaxation in bi-stable resistive states of chemical vapor deposition grown graphene, Thin Solid Films, 468-472, 522, 2012. (I.F=1.888)
  8. W. Iqbal, A. K. Singh, M. Z. Iqbal, Jonghwa Eom, Raman fingerprint of doping due to metal adsorbates on graphene, Journal of Physics Condensed Matter, 335301, 24, 2012. (I.F=2.223)
  9. Z. Iqbal, M. W. Iqbal, Jonghwa Eom, Muneer Ahmad, Núria Ferrer-Anglada, Capacitive tunnels in single-walled carbon nanotube networks on flexible substrate. Journal of Applied Physics, 063712, 111, 2012. (I.F=2.185)
  10. Z. Iqbal, A. K. Singh, M. W. Iqbal, Sunae Seo, Jonghwa Eom, Effect of e-beam irradiation on graphene layer grown by chemical vapor deposition, Journal of Applied Physics, 111, 084307, 2012. (I.F=2.185)

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